Morphology and Optical Properties of Porous GaAs Layers

Morphology and optical properties of the porous GaAs layers formed on a single crystal GaAs were investigated by using SEM, AFM, monochromatic multi-angle-of-incidence (MAI) ellipsometry, and photoluminescence and Raman scattering spectroscopies. The pore layer was composed of the two-layer structur...

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Bibliographic Details
Main Authors: Dmitruk, Nicolas L, Kutovyi, Sergij Yu, Dmitruk, Igor M, Berezovska, Natalia I, Simkiene, Irene, Sabataityte, Julija
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:Morphology and optical properties of the porous GaAs layers formed on a single crystal GaAs were investigated by using SEM, AFM, monochromatic multi-angle-of-incidence (MAI) ellipsometry, and photoluminescence and Raman scattering spectroscopies. The pore layer was composed of the two-layer structure: GaAs pores and its oxide above it. The formation of the two-layer structure caused the alternation of optical constants and the enhancement of Raman scattering and above-band-edge photoluminescence, which could be related to quantum confinement of excitons.
ISSN:0094-243X
DOI:10.1063/1.2729753