Low- and high-frequency C– V characteristics of the contacts formed by adding a solution of the nonpolymeric organic compound on p-type Si substrate

• Published in: Physica. B, Condensed matter Condensed matter, 2007-05, Vol.395 (1), p.93-97
• Main Authors: EBEOGLU, M. A, KILICOGLU, T, AYDIN, M. E
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Organic–inorganic semiconductor contact; Physics; Quercetin; Rectification; Schottky diodes; Surface double layers, schottky barriers, and work functions
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2007.02.063

Al/quercetin/p-Si Schottky barrier diodes (SBDs) have been fabricated by adding a solution of the nonpolymeric organic compound quercetin in ethanol on top of p-Si substrate, and then evaporating the solvent. The quercetin/p-Si contact shows rectifying behaviour and the reverse curve exhibit a weak bias voltage dependence. Barrier height and ideality factor value of 0.86 and 1.06 eV, respectively, for the device have been determined from the forward bias current—voltage ( I–V) characteristics. The energy distribution of the interface state density located in the semiconductor band gap at quercetin/p-Si interface ranges from 2.12×10 12 cm −2 eV −1 in (0.680− E v) eV to 4.68×10 11 cm −2 eV −1 in (0.813− E v) eV have been determined from the I–V and the capacitance–voltage ( C–V) characteristics (high- and low frequency). The interface state density has an exponential rise with bias from the midgap towards the top of the valence band.