Focused ion beam modifications of indium phosphide photonic crystals

This paper presents investigations in focused ion beam structuring and modification of indium phosphide/indium gallium arsenide phosphide based photonic crystal power splitters. The optical transmission and splitting ratio were compared to devices fabricated with electron beam lithography and induct...

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Bibliographic Details
Published in:Microelectronic engineering 2007-05, Vol.84 (5), p.1244-1247
Main Authors: Nellen, Philipp M., Strasser, Patric, Callegari, Victor, Wüest, Robert, Erni, Daniel, Robin, Franck
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Focused ion beam modifications
Indium phosphide
Integrated circuits
Integrated optics. Optical fibers and wave guides
Materials
Microelectronic fabrication (materials and surfaces technology)
Optical and optoelectronic circuits
Photonic crystals
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:This paper presents investigations in focused ion beam structuring and modification of indium phosphide/indium gallium arsenide phosphide based photonic crystal power splitters. The optical transmission and splitting ratio were compared to devices fabricated with electron beam lithography and inductively-coupled plasma, reactive ion etching. Prototyping of novel photonic designs, chip modifications, repair, and post-processing with focused ion beams may well reduce time to market in the telecommunication industry.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2007.01.037