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Focused ion beam modifications of indium phosphide photonic crystals

This paper presents investigations in focused ion beam structuring and modification of indium phosphide/indium gallium arsenide phosphide based photonic crystal power splitters. The optical transmission and splitting ratio were compared to devices fabricated with electron beam lithography and induct...

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Published in:	Microelectronic engineering 2007-05, Vol.84 (5), p.1244-1247
Main Authors:	Nellen, Philipp M., Strasser, Patric, Callegari, Victor, Wüest, Robert, Erni, Daniel, Robin, Franck
Format:	Article
Language:	English
Subjects:	Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Focused ion beam modifications Indium phosphide Integrated circuits Integrated optics. Optical fibers and wave guides Materials Microelectronic fabrication (materials and surfaces technology) Optical and optoelectronic circuits Photonic crystals Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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cited_by	cdi_FETCH-LOGICAL-c358t-902c453367e12676093a2f32cf1ca1940695a52f99a827a9b2c7175ea88812c93
cites	cdi_FETCH-LOGICAL-c358t-902c453367e12676093a2f32cf1ca1940695a52f99a827a9b2c7175ea88812c93
container_end_page	1247
container_issue	5
container_start_page	1244
container_title	Microelectronic engineering
container_volume	84
creator	Nellen, Philipp M. Strasser, Patric Callegari, Victor Wüest, Robert Erni, Daniel Robin, Franck
description	This paper presents investigations in focused ion beam structuring and modification of indium phosphide/indium gallium arsenide phosphide based photonic crystal power splitters. The optical transmission and splitting ratio were compared to devices fabricated with electron beam lithography and inductively-coupled plasma, reactive ion etching. Prototyping of novel photonic designs, chip modifications, repair, and post-processing with focused ion beams may well reduce time to market in the telecommunication industry.
doi_str_mv	10.1016/j.mee.2007.01.037
format	article
fullrecord	<record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29859610</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167931707001396</els_id><sourcerecordid>29859610</sourcerecordid><originalsourceid>FETCH-LOGICAL-c358t-902c453367e12676093a2f32cf1ca1940695a52f99a827a9b2c7175ea88812c93</originalsourceid><addsrcrecordid>eNp9UMtOwzAQtBBIlMIHcMsFbgl-JLEtTqhQQKrEBc6Wu9morpq42AlS_x5HrcSN0-yuZmZ3h5BbRgtGWf2wLTrEglMqC8oKKuQZmTElRV5VtTons8SRuRZMXpKrGLc09SVVM_K89DBGbDLn-2yNtss637jWgR3SJGa-zVzfuLHL9hsf9xvX4FQNvneQQTjEwe7iNbloE-DNCefka_nyuXjLVx-v74unVQ6iUkOuKYeyEqKWyHgta6qF5a3g0DKwTJe01pWteKu1VVxaveYgmazQKqUYBy3m5P7ouw_-e8Q4mM5FwN3O9ujHaLhWla4ZTUR2JELwMQZszT64zoaDYdRMeZmtSXmZKS9DmUl5Jc3dydxGsLs22B5c_BMqRWXJpiMejzxMn_44DCaCwx6wcQFhMI13_2z5BdlzfvU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29859610</pqid></control><display><type>article</type><title>Focused ion beam modifications of indium phosphide photonic crystals</title><source>ScienceDirect Freedom Collection</source><creator>Nellen, Philipp M. ; Strasser, Patric ; Callegari, Victor ; Wüest, Robert ; Erni, Daniel ; Robin, Franck</creator><creatorcontrib>Nellen, Philipp M. ; Strasser, Patric ; Callegari, Victor ; Wüest, Robert ; Erni, Daniel ; Robin, Franck</creatorcontrib><description>This paper presents investigations in focused ion beam structuring and modification of indium phosphide/indium gallium arsenide phosphide based photonic crystal power splitters. The optical transmission and splitting ratio were compared to devices fabricated with electron beam lithography and inductively-coupled plasma, reactive ion etching. Prototyping of novel photonic designs, chip modifications, repair, and post-processing with focused ion beams may well reduce time to market in the telecommunication industry.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2007.01.037</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Circuit properties ; Design. Technologies. Operation analysis. Testing ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; Focused ion beam modifications ; Indium phosphide ; Integrated circuits ; Integrated optics. Optical fibers and wave guides ; Materials ; Microelectronic fabrication (materials and surfaces technology) ; Optical and optoelectronic circuits ; Photonic crystals ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Microelectronic engineering, 2007-05, Vol.84 (5), p.1244-1247</ispartof><rights>2007 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-902c453367e12676093a2f32cf1ca1940695a52f99a827a9b2c7175ea88812c93</citedby><cites>FETCH-LOGICAL-c358t-902c453367e12676093a2f32cf1ca1940695a52f99a827a9b2c7175ea88812c93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18807419$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Nellen, Philipp M.</creatorcontrib><creatorcontrib>Strasser, Patric</creatorcontrib><creatorcontrib>Callegari, Victor</creatorcontrib><creatorcontrib>Wüest, Robert</creatorcontrib><creatorcontrib>Erni, Daniel</creatorcontrib><creatorcontrib>Robin, Franck</creatorcontrib><title>Focused ion beam modifications of indium phosphide photonic crystals</title><title>Microelectronic engineering</title><description>This paper presents investigations in focused ion beam structuring and modification of indium phosphide/indium gallium arsenide phosphide based photonic crystal power splitters. The optical transmission and splitting ratio were compared to devices fabricated with electron beam lithography and inductively-coupled plasma, reactive ion etching. Prototyping of novel photonic designs, chip modifications, repair, and post-processing with focused ion beams may well reduce time to market in the telecommunication industry.</description><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Focused ion beam modifications</subject><subject>Indium phosphide</subject><subject>Integrated circuits</subject><subject>Integrated optics. Optical fibers and wave guides</subject><subject>Materials</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Optical and optoelectronic circuits</subject><subject>Photonic crystals</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp9UMtOwzAQtBBIlMIHcMsFbgl-JLEtTqhQQKrEBc6Wu9morpq42AlS_x5HrcSN0-yuZmZ3h5BbRgtGWf2wLTrEglMqC8oKKuQZmTElRV5VtTons8SRuRZMXpKrGLc09SVVM_K89DBGbDLn-2yNtss637jWgR3SJGa-zVzfuLHL9hsf9xvX4FQNvneQQTjEwe7iNbloE-DNCefka_nyuXjLVx-v74unVQ6iUkOuKYeyEqKWyHgta6qF5a3g0DKwTJe01pWteKu1VVxaveYgmazQKqUYBy3m5P7ouw_-e8Q4mM5FwN3O9ujHaLhWla4ZTUR2JELwMQZszT64zoaDYdRMeZmtSXmZKS9DmUl5Jc3dydxGsLs22B5c_BMqRWXJpiMejzxMn_44DCaCwx6wcQFhMI13_2z5BdlzfvU</recordid><startdate>20070501</startdate><enddate>20070501</enddate><creator>Nellen, Philipp M.</creator><creator>Strasser, Patric</creator><creator>Callegari, Victor</creator><creator>Wüest, Robert</creator><creator>Erni, Daniel</creator><creator>Robin, Franck</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20070501</creationdate><title>Focused ion beam modifications of indium phosphide photonic crystals</title><author>Nellen, Philipp M. ; Strasser, Patric ; Callegari, Victor ; Wüest, Robert ; Erni, Daniel ; Robin, Franck</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-902c453367e12676093a2f32cf1ca1940695a52f99a827a9b2c7175ea88812c93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Focused ion beam modifications</topic><topic>Indium phosphide</topic><topic>Integrated circuits</topic><topic>Integrated optics. Optical fibers and wave guides</topic><topic>Materials</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Optical and optoelectronic circuits</topic><topic>Photonic crystals</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nellen, Philipp M.</creatorcontrib><creatorcontrib>Strasser, Patric</creatorcontrib><creatorcontrib>Callegari, Victor</creatorcontrib><creatorcontrib>Wüest, Robert</creatorcontrib><creatorcontrib>Erni, Daniel</creatorcontrib><creatorcontrib>Robin, Franck</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nellen, Philipp M.</au><au>Strasser, Patric</au><au>Callegari, Victor</au><au>Wüest, Robert</au><au>Erni, Daniel</au><au>Robin, Franck</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Focused ion beam modifications of indium phosphide photonic crystals</atitle><jtitle>Microelectronic engineering</jtitle><date>2007-05-01</date><risdate>2007</risdate><volume>84</volume><issue>5</issue><spage>1244</spage><epage>1247</epage><pages>1244-1247</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>This paper presents investigations in focused ion beam structuring and modification of indium phosphide/indium gallium arsenide phosphide based photonic crystal power splitters. The optical transmission and splitting ratio were compared to devices fabricated with electron beam lithography and inductively-coupled plasma, reactive ion etching. Prototyping of novel photonic designs, chip modifications, repair, and post-processing with focused ion beams may well reduce time to market in the telecommunication industry.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2007.01.037</doi><tpages>4</tpages></addata></record>
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identifier	ISSN: 0167-9317
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issn	0167-9317 1873-5568
language	eng
recordid	cdi_proquest_miscellaneous_29859610
source	ScienceDirect Freedom Collection
subjects	Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Focused ion beam modifications Indium phosphide Integrated circuits Integrated optics. Optical fibers and wave guides Materials Microelectronic fabrication (materials and surfaces technology) Optical and optoelectronic circuits Photonic crystals Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title	Focused ion beam modifications of indium phosphide photonic crystals
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T05%3A06%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Focused%20ion%20beam%20modifications%20of%20indium%20phosphide%20photonic%20crystals&rft.jtitle=Microelectronic%20engineering&rft.au=Nellen,%20Philipp%20M.&rft.date=2007-05-01&rft.volume=84&rft.issue=5&rft.spage=1244&rft.epage=1247&rft.pages=1244-1247&rft.issn=0167-9317&rft.eissn=1873-5568&rft.coden=MIENEF&rft_id=info:doi/10.1016/j.mee.2007.01.037&rft_dat=%3Cproquest_cross%3E29859610%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c358t-902c453367e12676093a2f32cf1ca1940695a52f99a827a9b2c7175ea88812c93%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=29859610&rft_id=info:pmid/&rfr_iscdi=true