Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes

Proton irradiation of Sc2O3/GaN and Sc2O3/MgO/GaN metal-oxide semiconductor diodes was performed at two energies, 10 MeV and 40 MeV, and total fluences of 5 X 10 cm, corresponding to 10 years in low-earth orbit. The proton damage causes a decrease in forward breakdown voltage and a flat-band voltage...

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Bibliographic Details
Published in:Journal of electronic materials 2007-04, Vol.36 (4), p.519-523
Main Authors: Allums, K.K., Hlad, M., Gerger, A.P., Gila, B.P., Abernathy, C.R., Pearton, S.J., Ren, F., Dwivedi, R., Fogarty, T.N., Wilkins, R.
Format: Article
Language:English
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Summary:Proton irradiation of Sc2O3/GaN and Sc2O3/MgO/GaN metal-oxide semiconductor diodes was performed at two energies, 10 MeV and 40 MeV, and total fluences of 5 X 10 cm, corresponding to 10 years in low-earth orbit. The proton damage causes a decrease in forward breakdown voltage and a flat-band voltage shift in the capacitance-voltage characteristics, indicating a change in fixed oxide charge and damage to the dielectric. The interface state densities after irradiation increased from 5.9 X 10 cmto 1.03 X 10 cm in Sc2O3/GaN diodes and from 2.33 X 10 to 5.3 X 10cmin Sc2O3/MgO/GaN diodes. Postannealing at 400 deg C in forming gas recovered most of the original characteristics but did increase the interfacial roughness.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-006-0035-y