Mapping of zinc content in Cd1-xZnxTe by optical methods

The paper compares different methods of optical mapping of zinc concentration x in Cd1-xZnxTe wafers for low x values and reviews the procedures for deriving band-gap energy from optical spectra (photoluminescence, absorption and reflectance) at different temperatures (liquid helium, liquid nitrogen...

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Bibliographic Details
Published in:Journal of electronic materials 2006-06, Vol.35 (6), p.1491-1494
Main Authors: HORODYSKY, P, FRANC, J, GRILL, R, HLIDEK, P, MORAVEC, P, BOK, J, HÖSCHL, P
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Ii-vi semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Solubility, segregation, and mixing
phase separation
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Summary:The paper compares different methods of optical mapping of zinc concentration x in Cd1-xZnxTe wafers for low x values and reviews the procedures for deriving band-gap energy from optical spectra (photoluminescence, absorption and reflectance) at different temperatures (liquid helium, liquid nitrogen and room temperature). Experimental errors of these techniques are compared and the segregation coefficient of zinc is calculated.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-006-0290-y