GaN nanorings: Another example of spontaneous polarization-induced nanostructure

Single-crystal GaN nanorings were synthesized by a vapor–solid process. The detailed morphological and crystallographic characterizations of these GaN nanorings were carried out to reveal their formation mechanism. The results presented here demonstrate that the formation of GaN nanorings can be exp...

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Bibliographic Details
Published in:Journal of crystal growth 2007-05, Vol.303 (2), p.427-432
Main Authors: Jian, J.K., Zhang, Z.H., Sun, Y.P., Lei, M., Chen, X.L., Wang, T.M., Wang, Cong
Format: Article
Language:English
Subjects:
A1. Nanostructures
A3. Chemical vapor deposition processes
B1. Gallium compounds
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Structure of solids and liquids
crystallography
Structure of specific crystalline solids
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Summary:Single-crystal GaN nanorings were synthesized by a vapor–solid process. The detailed morphological and crystallographic characterizations of these GaN nanorings were carried out to reveal their formation mechanism. The results presented here demonstrate that the formation of GaN nanorings can be explained by the self-bending of nanobelts due to the surface spontaneous polarization. GaN nanoring is another example of spontaneous polarization-induced nanostructure.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2006.11.209