ELECTRICAL PROPERTIES OF AMORPHOUS As2Se3-GeSe2-SnTe THIN FILMS

Electrical properties of vacuum evaporated thin As2Se3-GeSe2-SnTe films have been studied. The thermal activation energy of the films with different SnTe concentration is determined by the temperature dependence of conductivity. From electrical investigations some basic physical characteristics of t...

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Bibliographic Details
Published in:Journal of Optoelectronics and Advanced Materials 2005-06, Vol.7 (3), p.1299-1304
Main Authors: Parvanov, S, Vassilev, V, Aljihmani, L
Format: Article
Language:English
Online Access:Get full text
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Summary:Electrical properties of vacuum evaporated thin As2Se3-GeSe2-SnTe films have been studied. The thermal activation energy of the films with different SnTe concentration is determined by the temperature dependence of conductivity. From electrical investigations some basic physical characteristics of the investigated semiconductor films were calculated applying the Christov's theory for injected electron currents. Effective electron mass (mc/rn) in the conduction band, relative dielectric permittivity c of the films and the electron work function (x) at the Al/(As2Se3-GeSe2-SnTe) interface as a function of SnTe content were determined.
ISSN:1454-4164