Influence of interface interruption on spin relaxation in GaAs (1 1 0) quantum wells

• Published in: Journal of crystal growth 2007-04, Vol.301, p.93-96
• Main Authors: Liu, L.S., Wang, W.X., Li, Z.H., Liu, B.L., Zhao, H.M., Wang, J., Gao, H.C., Jiang, Z.W., Liu, S., Chen, H., Zhou, J.M.
• Format: Article
• Language: English
• Subjects: A1. X-ray diffraction; A3. Molecular-beam epitaxy; A3. Quantum wells; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Growth from vapor; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Nanoscale materials and structures: fabrication and characterization; Other topics in nanoscale materials and structures; Physics; Theory and models of film growth
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2006.11.074

The influence of interface growth interruption on electron spin relaxation time τs in GaAs/AlGaAs (1 1 0) quantum wells (QWs) grown by solid source molecular-beam epitaxy (SSMBE) has been investigated by grazing incidence X-ray reflectivity and time-resolved Kerr rotation spectroscopy (TRKR). Various inverted interface interruption times were used in growing QWs. Interface roughness of these QW samples was studied by grazing incidence X-ray reflectivity. The simulated results of reflectivity curves by standard software indicated that interface roughness decreased as the interface growth interruption time increased. TRKR measurements at room temperature showed that the appropriate growth interruption could increase spin relaxation time in GaAs/AlGaAs QWs drastically. This dramatic increase was explained by the suppression of the D’yakonov–Perel’ interaction.