Integration of functional epitaxial oxides into silicon: from high- k application to nanostructures

• Published in: Microelectronic engineering 2007-09, Vol.84 (9), p.2222-2225
• Main Authors: Osten, H.J., Czernohorsky, M., Dargis, R., Laha, A., Kühne, D., Bugiel, E., Fissel, A.
• Format: Article
• Language: English
• Subjects: Applied sciences; Compound structure devices; Dielectric, amorphous and glass solid devices; Electronics; Exact sciences and technology; Gadolinium oxide; Heterostructures; High- k material; Microelectronic fabrication (materials and surfaces technology); Molecular beam epitaxy; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2007.04.092

We will present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly. Experimental results for Gd 2O 3-based MOS capacitors grown under optimized conditions show that these layers are excellent candidates for application as very thin high- k materials replacing SiO 2 in future MOS devices. We also will present a new approach for nanostructure formation which is based on solid-phase epitaxy of the Si quantum-well combined with simultaneous vapor-phase epitaxy of the insulator on top of the quantum-well. Ultra-thin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by this approach on Si(111). Finally, the incorporation of crystalline Si islands into single-crystalline oxide layers will be demonstrated.