Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor

The modelling and subsequent experimental validation of nitride growth processes in commercial, production scale multi-wafer reactors is investigated with focus on group-III nitride compounds GaN and InGaN. The paper also deals with the development of group-III nitride growth processes at elevated p...

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Bibliographic Details
Published in:Journal of crystal growth 2007-05, Vol.303 (1), p.318-322
Main Authors: Martin, C., Dauelsberg, M., Protzmann, H., Boyd, A.R., Thrush, E.J., Heuken, M., Talalaev, R.A., Yakovlev, E.V., Kondratyev, A.V.
Format: Article
Language:English
Subjects:
A1. Computer simulation
A3. Closed coupled showerhead reactor
A3. Metal organic vapor-phase epitaxy
A3. Planetary Reactor
B1. Nitrides
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Summary:The modelling and subsequent experimental validation of nitride growth processes in commercial, production scale multi-wafer reactors is investigated with focus on group-III nitride compounds GaN and InGaN. The paper also deals with the development of group-III nitride growth processes at elevated process pressures, highlighting the effects of gas-phase nucleation phenomena on the growth efficiency of GaN. In addition, the latest hardware and process improvements to the Planetary Reactor ® technology are presented, with focus on the development using a modelling approach, of a new gas injector design for III-nitride growth. Subsequent experimental validation of the new injector design, and its flexibility to changing process regimes for GaN and InGaN will be demonstrated for the 42×2″ Planetary Reactor ®.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2006.11.151