Investigation of Compositional Disorder in GaAsN:H

The compositional disorder in as-grown and hydrogen irradiated GaAs1-xNx has been investigated by photoluminescence (PL) and PL excitation spectra. The static disorder introduced by N atoms in the GaAs host lattice is removed upon H irradiation of the samples, as shown by a significant decrease in t...

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Bibliographic Details
Main Authors: Felici, M, Trotta, R, Masia, F, Polimeni, A, Miriametro, A, Capizzi, M, Klar, P J, Stolz, W
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:The compositional disorder in as-grown and hydrogen irradiated GaAs1-xNx has been investigated by photoluminescence (PL) and PL excitation spectra. The static disorder introduced by N atoms in the GaAs host lattice is removed upon H irradiation of the samples, as shown by a significant decrease in the free-exciton broadening. A theoretical model developed for a purely random alloy well accounts for the dependence of the free-exciton PLE linewidth on N concentration.
ISSN:0094-243X
DOI:10.1063/1.2729893