Pulsed-laser crystallization and epitaxial growth of metal-organic films of Ca-doped LaMnO3 on STO and LSAT substrates

• Published in: Applied surface science 2007-05, Vol.253 (15), p.6527-6530
• Main Authors: DAOUDI, K, TSUCHIYA, T, KUMAGAI, T
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electrical properties of specific thin films; Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots); Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Solid phase epitaxy; growth from solid phases; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2007.01.033

Ca-doped LaMnO3 (LCMO) thin films have been successfully prepared on SrTiO3 (STO) and [(LaAlO3)0.3-(SrAlTaO6)0.7] (LSAT) substrates using the excimer laser assisted metal-organic deposition (ELAMOD) process. The crystallization and the epitaxial growth of the amorphous metal-organic LCMO thin films have been achieved using a KrF excimer laser irradiation while the substrates were kept at constant temperature of 500 deg C. Epitaxial films were obtained using laser fluence in the interval of 50-120mJ/cm2. The microstructure of the LCMO films was studied using cross-section transmission electron microscopy. High quality of LCMO films having smooth surfaces and sharp interfaces were obtained on both the STO and the LSAT substrates. The effect of the laser fluence on the temperature coefficient of resistance (TCR) was investigated. The largest values of TCR of the LCMO grown on the LSAT and the STO substrates of 8.3%K-1 and 7.46%K-1 were obtained at different laser fluence of 80mJ/cm2 and 70mJ/cm2, respectively.