Interface reaction between Ni and amorphous SiC

A Ni/amorphous SiC (a-SiC) multilayered sample was prepared by ion-beam sputtering and was used as a model system to study the stability of metal contacts with a-SiC against interface reactions. The diffusion of Ni into the a-SiC layer as well as Si and C into the Ni layer takes place concurrently d...

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Bibliographic Details
Published in:Journal of electronic materials 2004-10, Vol.33 (10), p.1064-1070
Main Authors: KIM, Sungtae, PEREPEZKO, J. H, DONG, Z, EDELSTEIN, A. S
Format: Article
Language:English
Subjects:
Chemical reactions
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Diffusion
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
General studies of phase transitions
Materials science
Nickel
Nucleation
Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
Phase diagrams of other materials
Physics
Semiconductor annealing
Silicon carbide
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Summary:A Ni/amorphous SiC (a-SiC) multilayered sample was prepared by ion-beam sputtering and was used as a model system to study the stability of metal contacts with a-SiC against interface reactions. The diffusion of Ni into the a-SiC layer as well as Si and C into the Ni layer takes place concurrently during the annealing process. An intermediate NiSi phase was identified in the Ni solution layer because of diffusion of Si and C resulting from the decomposition of a-SiC. A phase selection diagram has been developed that accounts for nucleation of the NiSi phase from the Ni solution layer. [PUBLICATION ABSTRACT] Key words: Interface reaction, amorphous, SiC, Ni, nucleation phase-selection diagram
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-004-0106-x