STUDIES OF INTERFACE STATES IN Sc2O3/GaN, MgO/GaN, AND MgScO/GaN STRUCTURES

Interface trap densities have been measured in Sc2O3/n-GaN, MgO/n-GaN, and MgSc/n-GaN metal-insulator-semiconductor structures by both conductance and deep level transient spectroscopy (DLTS) methods. Both methods indicate that for energies deeper than 0.3 eV from the conduction band-edge, the inter...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2007-01, Vol.154 (2), p.H115-H118
Main Authors: Polyakov, A Y, Smirnov, N B, Gila, B P, Hlad, M, Gerger, A P, Abernathy, C R, Pearton, S J
Format: Article
Language:English
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Summary:Interface trap densities have been measured in Sc2O3/n-GaN, MgO/n-GaN, and MgSc/n-GaN metal-insulator-semiconductor structures by both conductance and deep level transient spectroscopy (DLTS) methods. Both methods indicate that for energies deeper than 0.3 eV from the conduction band-edge, the interface trap density is low. DLTS measurements show that the interface trap density has a peak near 0.6-0.7 eV from the bottom of the conduction band. The interface trap density measured both by conductance and DLTS methods increases in the order Sc2O3, MgO, MgScO, which most likely reflects the improved lattice match of corresponding oxides with GaN. For MgSc/n-GaN structures, the generation of additional interface traps by the application of high positive bias was also seen. The effect could be reversed after a high negative bias was applied. 25 refs.
ISSN:0013-4651
DOI:10.1149/1.2405865