Preparation and electrical properties of highly (1 1 1) oriented antiferroelectric PLZST films by radio frequency magnetron sputtering

Highly (1 1 1) oriented lead lanthanum zirconate stannate titanate (PLZST) films were synthesized on Pt/Ti/SiO 2/Si substrates by radio frequency (RF) magnetron sputtering. The microstructure and electrical properties of the films were investigated as a function of post-annealing temperature. Smooth...

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Bibliographic Details
Published in:Acta materialia 2007-06, Vol.55 (11), p.3923-3928
Main Authors: Xu, Zhengkui, Chan, Wai-Hung
Format: Article
Language:English
Subjects:
Antiferroelectric
Applied sciences
Electrical properties
Exact sciences and technology
Ferroelectricity
Magnetron sputtering
Metals. Metallurgy
Microstructure
Production techniques
Radio frequencies
Sputtering
Stannates
Surface treatment
Texture
Titanates
Titanium
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Summary:Highly (1 1 1) oriented lead lanthanum zirconate stannate titanate (PLZST) films were synthesized on Pt/Ti/SiO 2/Si substrates by radio frequency (RF) magnetron sputtering. The microstructure and electrical properties of the films were investigated as a function of post-annealing temperature. Smooth and crack-free films obtained by post-annealing at 700 °C for 30 min, and exhibit a dense columnar microstructure with a grain size of ∼0.85 μm. The sputtered PLZST films of nominal composition Pb 0.97La 0.02 (Zr 0.60Sn 0.30Ti 0.10)O 3 display a high saturation polarization of ∼70 μC cm −2, a low antiferroelectric-to-ferroelectric switching field (
ISSN:1359-6454
1873-2453
DOI:10.1016/j.actamat.2007.03.008