Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3– grown by molecular beam epitaxy

The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3- have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully con...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2007-04, Vol.301-302, p.125-128
Main Authors: Ni, H.Q., Niu, Z.C., Fang, Z.D., Huang, S.S., Zhang, S.Y., Wu, D.H., Shun, Z., Han, Q., Wu, R.H.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3- have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2006.11.172