Photocurrent Measurements in Operating a-Si:H p-i-n Solar Cells with Different P-Layer Conditions

I-V characteristics, light intensity- and modulation frequency- dependences, and spectral distributions of photocurrent of three-types of a-Si:H p-i-n devices with different p-layer conditions (baseline, thinner and thicker) have been measured at room temperature. Dc and chopped light from a HeNe la...

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Bibliographic Details
Main Authors: Kaplan, R, Kaplan, B, Alkaya, A, Canbolat, H, Ozdemir, C
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:I-V characteristics, light intensity- and modulation frequency- dependences, and spectral distributions of photocurrent of three-types of a-Si:H p-i-n devices with different p-layer conditions (baseline, thinner and thicker) have been measured at room temperature. Dc and chopped light from a HeNe laser were used for excitation. From the results, the fill-factor, quantum efficiency, carrier lifetime, and the exponent v in the power-low relationship, Iph ~ Gv between photocurrent and generation rate were obtained and compared under different bias conditions and modulation frequencies. The results were interpreted suitably due to radiation loss and recombination mechanisms.
ISSN:0094-243X
DOI:10.1063/1.2733135