Optical, structural and electrical properties of zinc sulphide vacuum evaporated thin film

The II-VI group semiconductors are of great importance due to their applications in various opto-electronic devices. Among these semiconductors, zinc sulphide film is the most suitable for its utility in opto-electronic devices. ZnS film has been prepared on glass substrates by using vacuum evaporat...

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Published in:Indian journal of pure & applied physics 2006-09, Vol.44 (9), p.690-693
Main Authors: Kumar, Pawan, Kumar, Aravind, Dixit, P N, Sharma, T P
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Kumar, Aravind
Dixit, P N
Sharma, T P
description The II-VI group semiconductors are of great importance due to their applications in various opto-electronic devices. Among these semiconductors, zinc sulphide film is the most suitable for its utility in opto-electronic devices. ZnS film has been prepared on glass substrates by using vacuum evaporation method. The optical properties, especially refractive index by transmission spectra of these films have been studied in the wavelength range 400-850 nm using Manifaciers envelope method. The ZnS film has a direct band gap of 3.50 eV. The wurtzite structure of ZnS film has been confirmed by X-ray diffraction analysis. The electrical properties of ZnS especially dark conductivity and photoconductivity at different temperatures have also been studied.
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_29909914</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29909914</sourcerecordid><originalsourceid>FETCH-LOGICAL-p186t-20a249ef72b871b85d0679b246917ca3a6dd62162723b1be31f7b23b501076653</originalsourceid><addsrcrecordid>eNotjstKAzEYRrNQaK19h6xcOZDLJJkspXiDQje6cVNy-YdGMjMxly58eiu6-g4cOHxXaE0I1Z0QWq7QTSmfhEihNV-jj0OqwZl4j0vNzdWWTcRm9hgiuJp_FU55SZBrgIKXEX-H2eHSYjoFD_hsXGsThrNJSzYVPK6nMOMxxOkWXY8mFtj-7wa9Pz2-7V66_eH5dfew7xIdZO0YMazXMCpmB0XtIDyRSlvWS02VM9xI7yWjkinGLbXA6ajsBQWhREkp-Abd_XUvP78alHqcQnEQo5lhaeXItCZa057_AD0LT0U</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29909914</pqid></control><display><type>article</type><title>Optical, structural and electrical properties of zinc sulphide vacuum evaporated thin film</title><source>DOAJ Directory of Open Access Journals</source><creator>Kumar, Pawan ; Kumar, Aravind ; Dixit, P N ; Sharma, T P</creator><creatorcontrib>Kumar, Pawan ; Kumar, Aravind ; Dixit, P N ; Sharma, T P</creatorcontrib><description>The II-VI group semiconductors are of great importance due to their applications in various opto-electronic devices. Among these semiconductors, zinc sulphide film is the most suitable for its utility in opto-electronic devices. ZnS film has been prepared on glass substrates by using vacuum evaporation method. The optical properties, especially refractive index by transmission spectra of these films have been studied in the wavelength range 400-850 nm using Manifaciers envelope method. The ZnS film has a direct band gap of 3.50 eV. The wurtzite structure of ZnS film has been confirmed by X-ray diffraction analysis. The electrical properties of ZnS especially dark conductivity and photoconductivity at different temperatures have also been studied.</description><identifier>ISSN: 0019-5596</identifier><language>eng</language><ispartof>Indian journal of pure &amp; applied physics, 2006-09, Vol.44 (9), p.690-693</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784</link.rule.ids></links><search><creatorcontrib>Kumar, Pawan</creatorcontrib><creatorcontrib>Kumar, Aravind</creatorcontrib><creatorcontrib>Dixit, P N</creatorcontrib><creatorcontrib>Sharma, T P</creatorcontrib><title>Optical, structural and electrical properties of zinc sulphide vacuum evaporated thin film</title><title>Indian journal of pure &amp; applied physics</title><description>The II-VI group semiconductors are of great importance due to their applications in various opto-electronic devices. Among these semiconductors, zinc sulphide film is the most suitable for its utility in opto-electronic devices. ZnS film has been prepared on glass substrates by using vacuum evaporation method. The optical properties, especially refractive index by transmission spectra of these films have been studied in the wavelength range 400-850 nm using Manifaciers envelope method. The ZnS film has a direct band gap of 3.50 eV. The wurtzite structure of ZnS film has been confirmed by X-ray diffraction analysis. The electrical properties of ZnS especially dark conductivity and photoconductivity at different temperatures have also been studied.</description><issn>0019-5596</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNotjstKAzEYRrNQaK19h6xcOZDLJJkspXiDQje6cVNy-YdGMjMxly58eiu6-g4cOHxXaE0I1Z0QWq7QTSmfhEihNV-jj0OqwZl4j0vNzdWWTcRm9hgiuJp_FU55SZBrgIKXEX-H2eHSYjoFD_hsXGsThrNJSzYVPK6nMOMxxOkWXY8mFtj-7wa9Pz2-7V66_eH5dfew7xIdZO0YMazXMCpmB0XtIDyRSlvWS02VM9xI7yWjkinGLbXA6ajsBQWhREkp-Abd_XUvP78alHqcQnEQo5lhaeXItCZa057_AD0LT0U</recordid><startdate>20060901</startdate><enddate>20060901</enddate><creator>Kumar, Pawan</creator><creator>Kumar, Aravind</creator><creator>Dixit, P N</creator><creator>Sharma, T P</creator><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20060901</creationdate><title>Optical, structural and electrical properties of zinc sulphide vacuum evaporated thin film</title><author>Kumar, Pawan ; Kumar, Aravind ; Dixit, P N ; Sharma, T P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p186t-20a249ef72b871b85d0679b246917ca3a6dd62162723b1be31f7b23b501076653</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kumar, Pawan</creatorcontrib><creatorcontrib>Kumar, Aravind</creatorcontrib><creatorcontrib>Dixit, P N</creatorcontrib><creatorcontrib>Sharma, T P</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Indian journal of pure &amp; applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kumar, Pawan</au><au>Kumar, Aravind</au><au>Dixit, P N</au><au>Sharma, T P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical, structural and electrical properties of zinc sulphide vacuum evaporated thin film</atitle><jtitle>Indian journal of pure &amp; applied physics</jtitle><date>2006-09-01</date><risdate>2006</risdate><volume>44</volume><issue>9</issue><spage>690</spage><epage>693</epage><pages>690-693</pages><issn>0019-5596</issn><abstract>The II-VI group semiconductors are of great importance due to their applications in various opto-electronic devices. Among these semiconductors, zinc sulphide film is the most suitable for its utility in opto-electronic devices. ZnS film has been prepared on glass substrates by using vacuum evaporation method. The optical properties, especially refractive index by transmission spectra of these films have been studied in the wavelength range 400-850 nm using Manifaciers envelope method. The ZnS film has a direct band gap of 3.50 eV. The wurtzite structure of ZnS film has been confirmed by X-ray diffraction analysis. The electrical properties of ZnS especially dark conductivity and photoconductivity at different temperatures have also been studied.</abstract><tpages>4</tpages></addata></record>
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title Optical, structural and electrical properties of zinc sulphide vacuum evaporated thin film
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T15%3A54%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Optical,%20structural%20and%20electrical%20properties%20of%20zinc%20sulphide%20vacuum%20evaporated%20thin%20film&rft.jtitle=Indian%20journal%20of%20pure%20&%20applied%20physics&rft.au=Kumar,%20Pawan&rft.date=2006-09-01&rft.volume=44&rft.issue=9&rft.spage=690&rft.epage=693&rft.pages=690-693&rft.issn=0019-5596&rft_id=info:doi/&rft_dat=%3Cproquest%3E29909914%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-p186t-20a249ef72b871b85d0679b246917ca3a6dd62162723b1be31f7b23b501076653%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=29909914&rft_id=info:pmid/&rfr_iscdi=true