Precise arsenic doping of HgCdTe by MBE and effects on compositional interdiffusion

Characterization data are presented for arsenic-doped Hg^sub 1-x^Cd^sub x^Te epilayers, grown on CdZnTe substrates by molecular beam epitaxy. Arsenic incorporation is influenced both by the cracker-cell bulk temperature (As flux) and by the substrate surface temperature. An Arrhenius-type equation c...

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Bibliographic Details
Published in:Journal of electronic materials 2006-06, Vol.35 (6), p.1346-1349
Main Authors: PIQUETTE, E. C, EDWALL, D. D, LEE, D. L, ARIAS, J. M
Format: Article
Language:English
Subjects:
Arsenic
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Defects and impurities in crystals
microstructure
Density
Diffusion
Doping and impurity implantation in iii-v and ii-vi semiconductors
Efficiency
Exact sciences and technology
Ion implantation
Mass spectrometry
Materials science
Mercury cadmium telluride
Methods of deposition of films and coatings
film growth and epitaxy
Molecular beam epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Semiconductor doping
Structure of solids and liquids
crystallography
Temperature
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Summary:Characterization data are presented for arsenic-doped Hg^sub 1-x^Cd^sub x^Te epilayers, grown on CdZnTe substrates by molecular beam epitaxy. Arsenic incorporation is influenced both by the cracker-cell bulk temperature (As flux) and by the substrate surface temperature. An Arrhenius-type equation can be used to fit the As incorporation data, yielding characteristic energies of 1.54 and 6.61 eV for the As cell and HgCdTe surface temperatures, respectively, independent of alloy fraction. This relation allows significantly improved predictability and control in the As doping concentration. The effect of growth temperature on As incorporation is demonstrated using a multilayer test structure with composition stepped in a sequence, with x = 0.6, 0.45, 0.3, 0.2, of n-type material, followed by the reverse sequence of As-doped material, with the As cell temperature held constant. Secondary ion mass spectroscopy profiles of this layer again indicate the strong As incorporation dependence on growth temperature. Composition profiles for as-grown and annealed pieces of the multilayer sample show greater interdiffusion for the As-doped region as compared to the undoped region, which is attributed to the Fermi-level enhancement effect. [PUBLICATION ABSTRACT]
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-006-0266-y