Structural and electronic properties of hydrogen and interstitial Mn complexes in MnxGa1-xAs dilute magnetic semiconductors

The properties of hydrogenated MnxGa1-xAs (x=0.03) dilute magnetic semiconductor were investigated in a previous study which has shown the importance of electron correlation on the structure and the vibrational properties of complexes formed by H and substitutional Mn. In the present paper, we exten...

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Bibliographic Details
Main Authors: Filippone, F, Bonapasta, A Amore
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:The properties of hydrogenated MnxGa1-xAs (x=0.03) dilute magnetic semiconductor were investigated in a previous study which has shown the importance of electron correlation on the structure and the vibrational properties of complexes formed by H and substitutional Mn. In the present paper, we extend that study to the structural and electronic properties of complexes formed by H with interstitial Mn in the same DMS. We find that H does not bind directly to interstitial Mn. This is an important result in view of a possible discrimination of the different forms of Mn based on the H local vibrational modes.
ISSN:0094-243X
DOI:10.1063/1.2729856