Epitaxial growth of CdTe on (211) silicon mesas formed by deep reactive ion etching

By patterning a (211) Si substrate wafer into mesas and depositing CdTe onto this substrate by molecular beam epitaxy (MBE), we achieved the removal of nearly all threading dislocations from the epilayer. Faceting of mesa surfaces is observed and characterized. Deposition of CdTe on mesa sidewalls n...

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Bibliographic Details
Published in:Journal of electronic materials 2006-08, Vol.35 (8), p.1636-1640
Main Authors: MOLSTAD, Jay, BOYD, Phil, MARKUNAS, Justin, SMITH, David J, SMITH, Ed, GORDON, Eli, DINAN, J. H
Format: Article
Language:English
Subjects:
Cadmium telluride
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Ions
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular beam epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Semiconductor research
Silicon wafers
Surface cleaning, etching, patterning
Surface treatments
Threading dislocations
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Summary:By patterning a (211) Si substrate wafer into mesas and depositing CdTe onto this substrate by molecular beam epitaxy (MBE), we achieved the removal of nearly all threading dislocations from the epilayer. Faceting of mesa surfaces is observed and characterized. Deposition of CdTe on mesa sidewalls nucleates stacking faults along the (111) planes, which result in nonradiative carrier recombination. The density of these stacking faults can be reduced if care is taken to align the molecular beams from the effusion cells with particular crystallographic directions of the substrate. [PUBLICATION ABSTRACT]
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-006-0210-1