Preparation of the La0.8Sr0.2MnO3 films on STO and LAO substrates by excimer laser-assisted metal organic deposition using the KrF laser

• Published in: Applied surface science 2007-05, Vol.253 (15), p.6504-6507
• Main Authors: TSUCHIYA, T, DAOUDI, K, MANABE, T, YAMAGUCHI, I, KUMAGAI, T
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electrical properties of specific thin films; Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots); Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Laser deposition; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2007.01.035

La0.8Sr0.2MnO3 films were prepared on SrTiO3 (STO) and LaAlO3 (LAO) substrates using excimer laser-assisted metal organic deposition (ELAMOD). For the LAO substrate, no epitaxial La0.8Sr0.2MnO3 film was obtained by laser irradiation in the fluence range from 60 to 110mJ/cm2 with heating at 500 deg C. On the other hand, an epitaxial La0.8Sr0.2MnO3 film on the STO substrate was formed by laser irradiation in the fluence range from 60 to 100mJ/cm2 with heating at 500 deg C. To optimize the electrical properties for an IR sensor, the effects of the laser fluence, the irradiation time and the film thickness on the temperature dependence of the resistance and temperature coefficient of resistance (TCR: defined as 1/R*(dR/dT)) of the LSMO films were investigated. An LSMO film on the STO substrate that showed the maximum TCR of 3.9% at 265K was obtained by the ELAMOD process using the KrF laser.