Epitaxial growth and magnetic properties of GaMnNAs

• Published in: Journal of crystal growth 2007-04, Vol.301, p.647-650
• Main Authors: Manago, T., Sinsarp, A., Kawaguchi, K., Akinaga, H.
• Format: Article
• Language: English
• Subjects: A3. Molecular beam epitaxy; B2. GaMnNAs; B2. Magnetic materials; B2. Semiconducting III–V materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Other semiconductors; Physics; Specific materials; Surface and interface electron states; Surface states, band structure, electron density of states; Theory and models of film growth
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2006.11.134

The influence of the nitrogen doping in GaMnAs on the magnetic properties was investigated. The GaMnNAs film was grown by molecular beam epitaxy with a nitrogen plasma source. The GaMnNAs film with a large amount of nitrogen showed super-paramagnetic behaviour. The Arrott-plot and the Curie–Weiss plot also support the paramagnetism. The high concentration of nitrogen caused suppression of the ferromagnetism. One of the possibilities of the suppression is due to the band gap bowing effect, which causes the anti-bonding state of 3d-Mn to locate in the valence band in high nitrogen concentration.