Study of In203 Thin Films Prepared on TiN Substrates Using a Triethylindium and Oxygen Mixture

Indium oxide (In203) films was deposited on TiN substrates by the metal organic chemical vapor deposition technique using a triethylindium and oxygen mixture. The films deposited at 250-350 deg C were polycrystalline, while that deposited at 200 deg C was close to amorphous. XRD and SEM analyses ind...

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Bibliographic Details
Published in:Key engineering materials 2007-01, Vol.336-338, p.760-762
Main Authors: Kim, Hyoun Woo, Myung, Ju Hyun
Format: Article
Language:English
Online Access:Get full text
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Summary:Indium oxide (In203) films was deposited on TiN substrates by the metal organic chemical vapor deposition technique using a triethylindium and oxygen mixture. The films deposited at 250-350 deg C were polycrystalline, while that deposited at 200 deg C was close to amorphous. XRD and SEM analyses indicated that the films grown at 350 deg C had grained structures with the (222) preferred orientation.
ISSN:1013-9826