Study of defect levels in CdTe using thermoelectric effect spectroscopy

We have studied the defect levels in as grown and post growth processed cadmium telluride (CdTe) using thermoelectric effect spectroscopy (TEES) and thermally stimulated current (TSC) techniques. We have extracted the thermal energy (Eth) and trapping cross section (σ^sub th^) for the defect levels...

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Bibliographic Details
Published in:Journal of electronic materials 2006-06, Vol.35 (6), p.1333-1340
Main Authors: SOUNDARARAJAN, Raji, LYNN, Kelvin G, AWADALLAH, Salah, SZELES, Csaba, WEI, Su-Huai
Format: Article
Language:English
Subjects:
Cadmium telluride
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Defects
Electron states
Electronic transport in condensed matter
Exact sciences and technology
Ii-vi semiconductors
Impurity and defect levels
Microelectronics
Physics
Samples
Single crystals
Studies
Thermoelectric and thermomagnetic effects
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Summary:We have studied the defect levels in as grown and post growth processed cadmium telluride (CdTe) using thermoelectric effect spectroscopy (TEES) and thermally stimulated current (TSC) techniques. We have extracted the thermal energy (Eth) and trapping cross section (σ^sub th^) for the defect levels using the initial rise and variable heating rate methods. We have identified 10 different defect levels in the crystals. Thermal ionization energy values obtained experimentally were compared to theoretical values of the transition-energy levels of intrinsic and extrinsic defects and defect complexes in CdTe determined by first-principles band-structure calculations. On the basis of this comparison, we have associated the observed ionization levels with various native defects and impurity complexes. [PUBLICATION ABSTRACT]
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-006-0264-0