Solid source MBE growth on InP-based DHBTs for high-speed data communication

We report on the development of a double heterojunction bipolar transistor (DHBT) technology on InP substrates for high-speed data communication. The technology is based on DHBTs with an InP emitter, a graded InGaAs:C base and a composite InGaAs/InGaAsP/InP collector, grown by solid source phosphoro...

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Bibliographic Details
Published in:Journal of crystal growth 2007-04, Vol.301, p.1001-1004
Main Authors: Aidam, R., Lösch, R., Driad, R., Schneider, K., Makon, R.
Format: Article
Language:English
Subjects:
A3. Molecular beam epitaxy
B1. InP
B3. Bipolar transistors
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Other semiconductors
Physics
Specific materials
Theory and models of film growth
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Summary:We report on the development of a double heterojunction bipolar transistor (DHBT) technology on InP substrates for high-speed data communication. The technology is based on DHBTs with an InP emitter, a graded InGaAs:C base and a composite InGaAs/InGaAsP/InP collector, grown by solid source phosphorous MBE. High carbon doping levels in the base layer with excellent carrier mobility values allow the fabrication of devices with DC current gain ∼90 and cut-off frequencies beyond f t=265 GHz. Using this technology, integrated circuits, including lumped amplifiers, voltage controlled oscillators, multiplexers and demultiplexers, suitable for operation at 40 and 80 Gbit/s have been successfully fabricated.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2006.11.243