Transport property in SrTiO3 p-n junction

The transport properties of a homogenous perovskite oxide p-n junction composed of the p-type In-doped SrTiO3 and n-type Nb-doped SrTiO3 have been studied by solving one-dimensional steady-state carrier-transport equations based on the drift-diffusion model. The energy band profile, electric-field i...

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Bibliographic Details
Published in:Europhysics letters 2005-07, Vol.71 (2), p.283-289
Main Authors: Zhou, Qing-li, Jin, Kui-juan, Lu, Hui-bin, Han, Peng, Chen, Zheng-hao, Zhao, Kun, Zhou, Yue-liang, Yang, Guo-zhen
Format: Article
Language:English
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Summary:The transport properties of a homogenous perovskite oxide p-n junction composed of the p-type In-doped SrTiO3 and n-type Nb-doped SrTiO3 have been studied by solving one-dimensional steady-state carrier-transport equations based on the drift-diffusion model. The energy band profile, electric-field intensity, and charge density are obtained for the space charge region at various bias voltages. Furthermore, the rectifying characteristics of the I-V curves are calculated and analyzed as a function of doping density. The theoretical results are in good agreement with the experimental data, and more details in the understanding of transport mechanism for oxide p-n junctions have been gained.
ISSN:0295-5075
1286-4854
DOI:10.1209/epl/i2005-10084-4