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Surface composition, bonding, and morphology in the nucleation and growth of ultra-thin, high quality nanocrystalline diamond films

The morphology, composition, and bonding character (carbon hybridization state) of continuous, ultra-thin (thickness ∼ 60 nm) nanocrystalline diamond (NCD) membranes are reported. NCD films were deposited on a silicon substrate that was pretreated using an optimized, two-step seeding process. The su...

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Bibliographic Details
Published in:Diamond and related materials 2007-04, Vol.16 (4), p.718-724
Main Authors: Sumant, Anirudha V., Gilbert, P.U.P.A., Grierson, David S., Konicek, Andrew R., Abrecht, Mike, Butler, James E., Feygelson, Tatyana, Rotter, Shlomo S., Carpick, Robert W.
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Language:English
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Summary:The morphology, composition, and bonding character (carbon hybridization state) of continuous, ultra-thin (thickness ∼ 60 nm) nanocrystalline diamond (NCD) membranes are reported. NCD films were deposited on a silicon substrate that was pretreated using an optimized, two-step seeding process. The surface after each of the two steps, the as-grown NCD topside and the NCD underside (revealed by etching away the silicon substrate) is examined by X-ray PhotoElectron Emission spectroMicroscopy (X-PEEM) combined with X-ray absorption near edge structure (XANES) spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The first step in the seeding process, a short exposure to a hydrocarbon plasma, induces the formation of SiC at the diamond/Si interface along with a thin, uniform layer of hydrogenated, amorphous carbon on top. This amorphous carbon layer allows for a uniform, dense layer of nanodiamond seed particles to be spread over the substrate in the second step. This facilitates the growth of a homogeneous, continuous, smooth, and highly sp 3-bonded NCD film. We show for the first time that the underside of this film possesses atomic-scale smoothness (RMS roughness: 0.3 nm) and > 98% diamond content, demonstrating the effectiveness of the two-step seeding method for diamond film nucleation.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2006.12.011