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Surface composition, bonding, and morphology in the nucleation and growth of ultra-thin, high quality nanocrystalline diamond films
The morphology, composition, and bonding character (carbon hybridization state) of continuous, ultra-thin (thickness ∼ 60 nm) nanocrystalline diamond (NCD) membranes are reported. NCD films were deposited on a silicon substrate that was pretreated using an optimized, two-step seeding process. The su...
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Published in: | Diamond and related materials 2007-04, Vol.16 (4), p.718-724 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The morphology, composition, and bonding character (carbon hybridization state) of continuous, ultra-thin (thickness ∼
60 nm) nanocrystalline diamond (NCD) membranes are reported. NCD films were deposited on a silicon substrate that was pretreated using an optimized, two-step seeding process. The surface after each of the two steps, the as-grown NCD topside and the NCD underside (revealed by etching away the silicon substrate) is examined by X-ray PhotoElectron Emission spectroMicroscopy (X-PEEM) combined with X-ray absorption near edge structure (XANES) spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The first step in the seeding process, a short exposure to a hydrocarbon plasma, induces the formation of SiC at the diamond/Si interface along with a thin, uniform layer of hydrogenated, amorphous carbon on top. This amorphous carbon layer allows for a uniform, dense layer of nanodiamond seed particles to be spread over the substrate in the second step. This facilitates the growth of a homogeneous, continuous, smooth, and highly sp
3-bonded NCD film. We show for the first time that the underside of this film possesses atomic-scale smoothness (RMS roughness: 0.3 nm) and >
98% diamond content, demonstrating the effectiveness of the two-step seeding method for diamond film nucleation. |
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ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/j.diamond.2006.12.011 |