Depth dependence of Néel wall pinning on amorphous CoxSi1−x films with diluted arrays of elliptical antidots

Diluted arrays of elliptical antidots have been fabricated by optical lithography, electron beam lithography and plasma etching on amorphous Co74Si26 magnetic films with a well-defined uniaxial anisotropy. The magnetic behavior of two identical antidot arrays but with different hole depth in compari...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2007-09, Vol.316 (2), p.e27-e30
Main Authors: Pérez-Junquera, A., Martín, J.I., Anguita, J.V., Rodríguez-Rodríguez, G., Vélez, M., Rubio, H., Alvarez-Prado, L.M., Alameda, J.M.
Format: Article
Language:English
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Summary:Diluted arrays of elliptical antidots have been fabricated by optical lithography, electron beam lithography and plasma etching on amorphous Co74Si26 magnetic films with a well-defined uniaxial anisotropy. The magnetic behavior of two identical antidot arrays but with different hole depth in comparison with film thickness has been studied by transverse magneto-optical Kerr effect. Significant differences appear in the coercivity depending on whether the magnetic film is completely perforated or not, indicating a much more effective domain wall pinning process when the depth of the holes is smaller than the magnetic film thickness.
ISSN:0304-8853
DOI:10.1016/j.jmmm.2007.02.015