High-quality SiO2/GaN interface for enhanced operation field-effect transistor

The interface quality in GaN metal–oxide–semiconductor (MOS) capacitors was dramatically improved by annealing after SiO2 deposition. The interface state density (Dit) of samples annealed at 900–1000 °C was estimated to be ∼2 × 1011 cm–2 eV–1 at 0.2 eV under the conduction band based on the calculat...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2007-06, Vol.204 (6), p.2032-2036
Main Authors: Niiyama, Yuki, Shinagawa, Tatsuyuki, Ootomo, Shinya, Kambayashi, Hiroshi, Nomura, Takehiko, Yoshida, Seikoh
Format: Article
Language:English
Subjects:
68.55.Jk
73.40.Qv
73.61.Ey
81.40.Ef
81.40.Rs
85.30.Tv
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:The interface quality in GaN metal–oxide–semiconductor (MOS) capacitors was dramatically improved by annealing after SiO2 deposition. The interface state density (Dit) of samples annealed at 900–1000 °C was estimated to be ∼2 × 1011 cm–2 eV–1 at 0.2 eV under the conduction band based on the calculation of the Terman method. Using this SiO2, it is expected that GaN MOSFETs can be operated. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6300
0031-8965
1862-6319
DOI:10.1002/pssa.200674844