High-quality SiO2/GaN interface for enhanced operation field-effect transistor

The interface quality in GaN metal–oxide–semiconductor (MOS) capacitors was dramatically improved by annealing after SiO2 deposition. The interface state density (Dit) of samples annealed at 900–1000 °C was estimated to be ∼2 × 1011 cm–2 eV–1 at 0.2 eV under the conduction band based on the calculat...

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Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2007-06, Vol.204 (6), p.2032-2036
Main Authors: Niiyama, Yuki, Shinagawa, Tatsuyuki, Ootomo, Shinya, Kambayashi, Hiroshi, Nomura, Takehiko, Yoshida, Seikoh
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Language:English
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68.55.Jk
73.40.Qv
73.61.Ey
81.40.Ef
81.40.Rs
85.30.Tv
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_issue 6
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container_title Physica status solidi. A, Applications and materials science
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creator Niiyama, Yuki
Shinagawa, Tatsuyuki
Ootomo, Shinya
Kambayashi, Hiroshi
Nomura, Takehiko
Yoshida, Seikoh
description The interface quality in GaN metal–oxide–semiconductor (MOS) capacitors was dramatically improved by annealing after SiO2 deposition. The interface state density (Dit) of samples annealed at 900–1000 °C was estimated to be ∼2 × 1011 cm–2 eV–1 at 0.2 eV under the conduction band based on the calculation of the Terman method. Using this SiO2, it is expected that GaN MOSFETs can be operated. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssa.200674844
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subjects 68.55.Jk
73.40.Qv
73.61.Ey
81.40.Ef
81.40.Rs
85.30.Tv
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title High-quality SiO2/GaN interface for enhanced operation field-effect transistor
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