Effect of MgO in ZnO films grown on nitrided sapphires

An improved MBE-grown ZnO film on nitrided sapphire was obtained by introducing an MgO buffer layer before the ZnO growth. The effect of MgO layer was systematically studied by transmission electron microscopy investigations. It was found that the island feature of MgO buffer promoted the strain rel...

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Bibliographic Details
Published in:Journal of crystal growth 2007-07, Vol.305 (1), p.74-77
Main Authors: Wang, Y., Mei, Z.X., Yuan, H.T., Du, X.L., Zou, J., Jia, J.F., Xue, Q.K., Zhang, Z.
Format: Article
Language:English
Subjects:
A1. Characterization
A1. Defects
A1. Interfaces
A2. Molecular beam epitaxy
B2. Semiconducting II–VI materials
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Theory and models of film growth
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Summary:An improved MBE-grown ZnO film on nitrided sapphire was obtained by introducing an MgO buffer layer before the ZnO growth. The effect of MgO layer was systematically studied by transmission electron microscopy investigations. It was found that the island feature of MgO buffer promoted the strain relaxation of the nitrided layer, which, in turn, improved the quality of the ZnO film.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2007.03.059