Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition

Non-polar a-plane ( 1 1 2 ¯ 0 ) GaN thin films were grown on r-plane ( 1 1 ¯ 0 2 ) sapphire substrates by metal-organic chemical vapor deposition. In order to obtain a-plane GaN films with better crystal quality and surface morphology, detailed comparisons between different growth conditions were in...

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Bibliographic Details
Published in:Journal of crystal growth 2007-03, Vol.300 (2), p.308-313
Main Authors: Ko, T.S., Wang, T.C., Gao, R.C., Chen, H.G., Huang, G.S., Lu, T.C., Kuo, H.C., Wang, S.C.
Format: Article
Language:English
Subjects:
A1. X-ray diffraction
A3. Metal-organic chemical vapor deposition
B1. Nitrides
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Summary:Non-polar a-plane ( 1 1 2 ¯ 0 ) GaN thin films were grown on r-plane ( 1 1 ¯ 0 2 ) sapphire substrates by metal-organic chemical vapor deposition. In order to obtain a-plane GaN films with better crystal quality and surface morphology, detailed comparisons between different growth conditions were investigated. The results showed that high-temperature and low-pressure conditions facilitating two-dimensional growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best mean roughness of the surface morphology was 10.5 Å. Various thickness values of AlN nucleation layers and the V/III ratios for growth of the a-plane GaN bulk were also studied to determine the best condition for obtaining a smooth surface morphology of the a-plane GaN layer.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2006.12.046