Silicon nanowire on oxide/nitride/oxide for memory application

We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts to the Si nanowires grown on pre-defined location...

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Bibliographic Details
Published in:Nanotechnology 2007-06, Vol.18 (23), p.235204-235204 (4)
Main Authors: Li, Qiliang, Zhu, Xiaoxiao, Xiong, Hao D, Koo, Sang-Mo, Ioannou, D E, Kopanski, Joseph J, Suehle, J S, Richter, C A
Format: Article
Language:English
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Summary:We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts to the Si nanowires grown on pre-defined locations. A large memory window with high on/off-state current ratio due to the small radius and intrinsic doping of the Si nanowire is obtained. In addition, the simple reversible write/read/erase operations have been implemented with these memory devices. The dynamics of the nanowire/nitride charge exchange and its effect on the threshold voltage and memory retention have been investigated.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/18/23/235204