Nitrogen ion implantation in single wall carbon nanotubes

We report an X-ray photoemission and electron energy loss study on 3 keV N 2 + ion implantation in single wall carbon nanotubes. Our results show that nitrogen atoms can bind to carbon in tetrahedral sp 3, defects related pyridine-like, and triangular sp 2 configurations and such bondings are stable...

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Bibliographic Details
Published in:Surface science 2007-07, Vol.601 (13), p.2819-2822
Main Authors: Xu, F., Minniti, M., Giallombardo, C., Cupolillo, A., Barone, P., Oliva, A., Papagno, L.
Format: Article
Language:English
Subjects:
Carbon nanotubes
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Ion bombardment
Ion implantation
Nitrogen molecule
Photoelectron emission
Physics
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Summary:We report an X-ray photoemission and electron energy loss study on 3 keV N 2 + ion implantation in single wall carbon nanotubes. Our results show that nitrogen atoms can bind to carbon in tetrahedral sp 3, defects related pyridine-like, and triangular sp 2 configurations and such bondings are stable for annealing up to 650 K. Heating at higher temperatures results in preferential substitutional nitrogen doping. This technique opens a new channel for controlled doping in carbon nanotubes for device applications.
ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2006.12.049