Spin-Polarized Electrons Extracted from GaAs Tips using Field Emission

A pyramidal shaped GaAs (tip-GaAs) photocathode for a polarized electron source (PES) was developed to improve beam brightness and negative electron affinity (NEA) lifetime by using field emission. The emission mechanism also enables the photocathode to extract electrons from the positive electron a...

Full description

Saved in:
Bibliographic Details
Main Authors: Kuwahara, M, Morino, T, Nakanishi, T, Okumi, S, Yamamoto, M, Miyamoto, M, Yamamoto, N, Sakai, R, Tamagaki, K, Mano, A, Utsu, A, Yamaguchi, K
Format: Conference Proceeding
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 1060
container_issue
container_start_page 1055
container_title
container_volume 915
creator Kuwahara, M
Morino, T
Nakanishi, T
Okumi, S
Yamamoto, M
Miyamoto, M
Yamamoto, N
Sakai, R
Tamagaki, K
Mano, A
Utsu, A
Yamaguchi, K
description A pyramidal shaped GaAs (tip-GaAs) photocathode for a polarized electron source (PES) was developed to improve beam brightness and negative electron affinity (NEA) lifetime by using field emission. The emission mechanism also enables the photocathode to extract electrons from the positive electron affinity (PEA) surface, and relax the NEA lifetime problem. I-V characteristics of electrons extracted from tip-GaAs shows that the electron beam was extracted by field emission mechanism, because a linear dependence was obtained in Fowler-Nordheim (F-N) plot. Furthermore, a tip-GaAs cathode has succeeded in generation of spin polarized electron beam. The polarization degree of tip-GaAs is about 34% at excitation photon energy of 1.63eV which is no less than that obtained by an NEA-GaAs cathode.
doi_str_mv 10.1063/1.2750952
format conference_proceeding
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_29989940</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29989940</sourcerecordid><originalsourceid>FETCH-LOGICAL-n230t-a16d3cdd5de530ff10bba099a09bddc3ef88f539b62a867d2342bb7a78f80f6d3</originalsourceid><addsrcrecordid>eNotjk1LAzEYhAMqWGsP_oOcvG19Nx-b5FhKtwoFBSt4K8kmkUiarJtdEH-9C3oYBoZnhkHoroZ1DQ19qNdEcFCcXKCVEhIE5QwYoc0lWgAoVhFG36_RTSmfAEQJIReofe1Dql5y1EP4cRbvouvGIaeCd9_joLtxzvyQz3ivNwUfQ1_wVEL6wG1wccbPoZSQ0y268joWt_r3JXprd8ftY3V43j9tN4cqEQpjpevG0s5abh2n4H0NxmhQapaxtqPOS-k5VaYhWjbCEsqIMUIL6SX4ubtE93-7_ZC_JlfG03ygczHq5PJUTkQpqRQD-gtnVU8J</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>29989940</pqid></control><display><type>conference_proceeding</type><title>Spin-Polarized Electrons Extracted from GaAs Tips using Field Emission</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Kuwahara, M ; Morino, T ; Nakanishi, T ; Okumi, S ; Yamamoto, M ; Miyamoto, M ; Yamamoto, N ; Sakai, R ; Tamagaki, K ; Mano, A ; Utsu, A ; Yamaguchi, K</creator><creatorcontrib>Kuwahara, M ; Morino, T ; Nakanishi, T ; Okumi, S ; Yamamoto, M ; Miyamoto, M ; Yamamoto, N ; Sakai, R ; Tamagaki, K ; Mano, A ; Utsu, A ; Yamaguchi, K</creatorcontrib><description>A pyramidal shaped GaAs (tip-GaAs) photocathode for a polarized electron source (PES) was developed to improve beam brightness and negative electron affinity (NEA) lifetime by using field emission. The emission mechanism also enables the photocathode to extract electrons from the positive electron affinity (PEA) surface, and relax the NEA lifetime problem. I-V characteristics of electrons extracted from tip-GaAs shows that the electron beam was extracted by field emission mechanism, because a linear dependence was obtained in Fowler-Nordheim (F-N) plot. Furthermore, a tip-GaAs cathode has succeeded in generation of spin polarized electron beam. The polarization degree of tip-GaAs is about 34% at excitation photon energy of 1.63eV which is no less than that obtained by an NEA-GaAs cathode.</description><identifier>ISSN: 0094-243X</identifier><identifier>ISBN: 9780735404236</identifier><identifier>ISBN: 0735404232</identifier><identifier>DOI: 10.1063/1.2750952</identifier><language>eng</language><ispartof>Proceedings of the 17th International Spin Physics Symposium (AIP Conference Proceedings Volume 915), 2007, Vol.915, p.1055-1060</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Kuwahara, M</creatorcontrib><creatorcontrib>Morino, T</creatorcontrib><creatorcontrib>Nakanishi, T</creatorcontrib><creatorcontrib>Okumi, S</creatorcontrib><creatorcontrib>Yamamoto, M</creatorcontrib><creatorcontrib>Miyamoto, M</creatorcontrib><creatorcontrib>Yamamoto, N</creatorcontrib><creatorcontrib>Sakai, R</creatorcontrib><creatorcontrib>Tamagaki, K</creatorcontrib><creatorcontrib>Mano, A</creatorcontrib><creatorcontrib>Utsu, A</creatorcontrib><creatorcontrib>Yamaguchi, K</creatorcontrib><title>Spin-Polarized Electrons Extracted from GaAs Tips using Field Emission</title><title>Proceedings of the 17th International Spin Physics Symposium (AIP Conference Proceedings Volume 915)</title><description>A pyramidal shaped GaAs (tip-GaAs) photocathode for a polarized electron source (PES) was developed to improve beam brightness and negative electron affinity (NEA) lifetime by using field emission. The emission mechanism also enables the photocathode to extract electrons from the positive electron affinity (PEA) surface, and relax the NEA lifetime problem. I-V characteristics of electrons extracted from tip-GaAs shows that the electron beam was extracted by field emission mechanism, because a linear dependence was obtained in Fowler-Nordheim (F-N) plot. Furthermore, a tip-GaAs cathode has succeeded in generation of spin polarized electron beam. The polarization degree of tip-GaAs is about 34% at excitation photon energy of 1.63eV which is no less than that obtained by an NEA-GaAs cathode.</description><issn>0094-243X</issn><isbn>9780735404236</isbn><isbn>0735404232</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotjk1LAzEYhAMqWGsP_oOcvG19Nx-b5FhKtwoFBSt4K8kmkUiarJtdEH-9C3oYBoZnhkHoroZ1DQ19qNdEcFCcXKCVEhIE5QwYoc0lWgAoVhFG36_RTSmfAEQJIReofe1Dql5y1EP4cRbvouvGIaeCd9_joLtxzvyQz3ivNwUfQ1_wVEL6wG1wccbPoZSQ0y268joWt_r3JXprd8ftY3V43j9tN4cqEQpjpevG0s5abh2n4H0NxmhQapaxtqPOS-k5VaYhWjbCEsqIMUIL6SX4ubtE93-7_ZC_JlfG03ygczHq5PJUTkQpqRQD-gtnVU8J</recordid><startdate>20070101</startdate><enddate>20070101</enddate><creator>Kuwahara, M</creator><creator>Morino, T</creator><creator>Nakanishi, T</creator><creator>Okumi, S</creator><creator>Yamamoto, M</creator><creator>Miyamoto, M</creator><creator>Yamamoto, N</creator><creator>Sakai, R</creator><creator>Tamagaki, K</creator><creator>Mano, A</creator><creator>Utsu, A</creator><creator>Yamaguchi, K</creator><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20070101</creationdate><title>Spin-Polarized Electrons Extracted from GaAs Tips using Field Emission</title><author>Kuwahara, M ; Morino, T ; Nakanishi, T ; Okumi, S ; Yamamoto, M ; Miyamoto, M ; Yamamoto, N ; Sakai, R ; Tamagaki, K ; Mano, A ; Utsu, A ; Yamaguchi, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-n230t-a16d3cdd5de530ff10bba099a09bddc3ef88f539b62a867d2342bb7a78f80f6d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kuwahara, M</creatorcontrib><creatorcontrib>Morino, T</creatorcontrib><creatorcontrib>Nakanishi, T</creatorcontrib><creatorcontrib>Okumi, S</creatorcontrib><creatorcontrib>Yamamoto, M</creatorcontrib><creatorcontrib>Miyamoto, M</creatorcontrib><creatorcontrib>Yamamoto, N</creatorcontrib><creatorcontrib>Sakai, R</creatorcontrib><creatorcontrib>Tamagaki, K</creatorcontrib><creatorcontrib>Mano, A</creatorcontrib><creatorcontrib>Utsu, A</creatorcontrib><creatorcontrib>Yamaguchi, K</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kuwahara, M</au><au>Morino, T</au><au>Nakanishi, T</au><au>Okumi, S</au><au>Yamamoto, M</au><au>Miyamoto, M</au><au>Yamamoto, N</au><au>Sakai, R</au><au>Tamagaki, K</au><au>Mano, A</au><au>Utsu, A</au><au>Yamaguchi, K</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Spin-Polarized Electrons Extracted from GaAs Tips using Field Emission</atitle><btitle>Proceedings of the 17th International Spin Physics Symposium (AIP Conference Proceedings Volume 915)</btitle><date>2007-01-01</date><risdate>2007</risdate><volume>915</volume><spage>1055</spage><epage>1060</epage><pages>1055-1060</pages><issn>0094-243X</issn><isbn>9780735404236</isbn><isbn>0735404232</isbn><abstract>A pyramidal shaped GaAs (tip-GaAs) photocathode for a polarized electron source (PES) was developed to improve beam brightness and negative electron affinity (NEA) lifetime by using field emission. The emission mechanism also enables the photocathode to extract electrons from the positive electron affinity (PEA) surface, and relax the NEA lifetime problem. I-V characteristics of electrons extracted from tip-GaAs shows that the electron beam was extracted by field emission mechanism, because a linear dependence was obtained in Fowler-Nordheim (F-N) plot. Furthermore, a tip-GaAs cathode has succeeded in generation of spin polarized electron beam. The polarization degree of tip-GaAs is about 34% at excitation photon energy of 1.63eV which is no less than that obtained by an NEA-GaAs cathode.</abstract><doi>10.1063/1.2750952</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0094-243X
ispartof Proceedings of the 17th International Spin Physics Symposium (AIP Conference Proceedings Volume 915), 2007, Vol.915, p.1055-1060
issn 0094-243X
language eng
recordid cdi_proquest_miscellaneous_29989940
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
title Spin-Polarized Electrons Extracted from GaAs Tips using Field Emission
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T02%3A40%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Spin-Polarized%20Electrons%20Extracted%20from%20GaAs%20Tips%20using%20Field%20Emission&rft.btitle=Proceedings%20of%20the%2017th%20International%20Spin%20Physics%20Symposium%20(AIP%20Conference%20Proceedings%20Volume%20915)&rft.au=Kuwahara,%20M&rft.date=2007-01-01&rft.volume=915&rft.spage=1055&rft.epage=1060&rft.pages=1055-1060&rft.issn=0094-243X&rft.isbn=9780735404236&rft.isbn_list=0735404232&rft_id=info:doi/10.1063/1.2750952&rft_dat=%3Cproquest%3E29989940%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-n230t-a16d3cdd5de530ff10bba099a09bddc3ef88f539b62a867d2342bb7a78f80f6d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=29989940&rft_id=info:pmid/&rfr_iscdi=true