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Amorphous silicon films with high deposition rate prepared using argon and hydrogen diluted silane for stable solar cells
Hydrogenated amorphous silicon films with high deposition rate (4–5 Å/s) and reduced Staebler–Wronski effect are prepared using a mixture of silane (SiH 4), hydrogen and argon. The films show an improvement in short and medium range order. The structural, transport and stability studies on the films...
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| Published in: | Solar energy materials and solar cells 2007-08, Vol.91 (13), p.1253-1257 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c408t-365947c1167be6a4a7e7f364fa0ec6e2e025771c08e00266deb37ffd607c31933 |
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| cites | cdi_FETCH-LOGICAL-c408t-365947c1167be6a4a7e7f364fa0ec6e2e025771c08e00266deb37ffd607c31933 |
| container_end_page | 1257 |
| container_issue | 13 |
| container_start_page | 1253 |
| container_title | Solar energy materials and solar cells |
| container_volume | 91 |
| creator | Gogoi, Purabi Dixit, P.N. Agarwal, Pratima |
| description | Hydrogenated amorphous silicon films with high deposition rate (4–5
Å/s) and reduced Staebler–Wronski effect are prepared using a mixture of silane (SiH
4), hydrogen and argon. The films show an improvement in short and medium range order. The structural, transport and stability studies on the films are done using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman scattering studies, electrical conductivity and diffusion length measurement. Presence of both atomic hydrogen and Ar
* in the plasma causes breaking of weak Si
Si bonds and subsequent reconstruction of strong bonds resulting in improvement of short and medium range order. The improved structural order enhances the stability of these films against light soaking. High deposition rate is due to the lesser etching of growing surface compared to the case of only hydrogen diluted silane. |
| doi_str_mv | 10.1016/j.solmat.2007.03.004 |
| format | article |
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Å/s) and reduced Staebler–Wronski effect are prepared using a mixture of silane (SiH
4), hydrogen and argon. The films show an improvement in short and medium range order. The structural, transport and stability studies on the films are done using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman scattering studies, electrical conductivity and diffusion length measurement. Presence of both atomic hydrogen and Ar
* in the plasma causes breaking of weak Si
Si bonds and subsequent reconstruction of strong bonds resulting in improvement of short and medium range order. The improved structural order enhances the stability of these films against light soaking. High deposition rate is due to the lesser etching of growing surface compared to the case of only hydrogen diluted silane.</description><identifier>ISSN: 0927-0248</identifier><identifier>EISSN: 1879-3398</identifier><identifier>DOI: 10.1016/j.solmat.2007.03.004</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Amorphous silicon ; Applied sciences ; Argon dilution ; Deposition rate ; Energy ; Exact sciences and technology ; Natural energy ; Photovoltaic conversion ; Solar cells. Photoelectrochemical cells ; Solar energy ; Stability ; Staebler–Wronski effect</subject><ispartof>Solar energy materials and solar cells, 2007-08, Vol.91 (13), p.1253-1257</ispartof><rights>2007 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c408t-365947c1167be6a4a7e7f364fa0ec6e2e025771c08e00266deb37ffd607c31933</citedby><cites>FETCH-LOGICAL-c408t-365947c1167be6a4a7e7f364fa0ec6e2e025771c08e00266deb37ffd607c31933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18831435$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Gogoi, Purabi</creatorcontrib><creatorcontrib>Dixit, P.N.</creatorcontrib><creatorcontrib>Agarwal, Pratima</creatorcontrib><title>Amorphous silicon films with high deposition rate prepared using argon and hydrogen diluted silane for stable solar cells</title><title>Solar energy materials and solar cells</title><description>Hydrogenated amorphous silicon films with high deposition rate (4–5
Å/s) and reduced Staebler–Wronski effect are prepared using a mixture of silane (SiH
4), hydrogen and argon. The films show an improvement in short and medium range order. The structural, transport and stability studies on the films are done using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman scattering studies, electrical conductivity and diffusion length measurement. Presence of both atomic hydrogen and Ar
* in the plasma causes breaking of weak Si
Si bonds and subsequent reconstruction of strong bonds resulting in improvement of short and medium range order. The improved structural order enhances the stability of these films against light soaking. High deposition rate is due to the lesser etching of growing surface compared to the case of only hydrogen diluted silane.</description><subject>Amorphous silicon</subject><subject>Applied sciences</subject><subject>Argon dilution</subject><subject>Deposition rate</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Natural energy</subject><subject>Photovoltaic conversion</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Stability</subject><subject>Staebler–Wronski effect</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp9kE-PFCEQxYnRxHH1G3jgordui4aB7ovJZuO_ZBMveiYMFNNM6KYFRjPfXiaziTdPdahfvXrvEfKWQc-AyQ-nvqS4mNoPAKoH3gOIZ2THRjV1nE_jc7KDaVAdDGJ8SV6VcgKAQXKxI5f7JeVtTudCS4jBppX6EJdC_4Q60zkcZ-pwSyXU0FbZVKRbxs1kdPRcwnqkJh_bxqyOzheX0xFX6kI81wY0RbMi9SnTUs0hIm0-TaYWYyyvyQtvYsE3T_OO_Pz86cfD1-7x-5dvD_ePnRUw1o7L_SSUZUyqA0ojjELluRTeAFqJA8KwV4pZGPGaSTo8cOW9k6AsZxPnd-T9TXfL6dcZS9VLKFcHzVqLrYdpmjjj0EBxA21OpWT0esthMfmiGehrz_qkbz3ra88auG49t7N3T_qmWBN9NqsN5d_tOHIm-L5xH28ctrC_A2ZdbMDVogsZbdUuhf8_-gtb-5ez</recordid><startdate>20070815</startdate><enddate>20070815</enddate><creator>Gogoi, Purabi</creator><creator>Dixit, P.N.</creator><creator>Agarwal, Pratima</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20070815</creationdate><title>Amorphous silicon films with high deposition rate prepared using argon and hydrogen diluted silane for stable solar cells</title><author>Gogoi, Purabi ; Dixit, P.N. ; Agarwal, Pratima</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c408t-365947c1167be6a4a7e7f364fa0ec6e2e025771c08e00266deb37ffd607c31933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Amorphous silicon</topic><topic>Applied sciences</topic><topic>Argon dilution</topic><topic>Deposition rate</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Natural energy</topic><topic>Photovoltaic conversion</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>Stability</topic><topic>Staebler–Wronski effect</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gogoi, Purabi</creatorcontrib><creatorcontrib>Dixit, P.N.</creatorcontrib><creatorcontrib>Agarwal, Pratima</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gogoi, Purabi</au><au>Dixit, P.N.</au><au>Agarwal, Pratima</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Amorphous silicon films with high deposition rate prepared using argon and hydrogen diluted silane for stable solar cells</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>2007-08-15</date><risdate>2007</risdate><volume>91</volume><issue>13</issue><spage>1253</spage><epage>1257</epage><pages>1253-1257</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>Hydrogenated amorphous silicon films with high deposition rate (4–5
Å/s) and reduced Staebler–Wronski effect are prepared using a mixture of silane (SiH
4), hydrogen and argon. The films show an improvement in short and medium range order. The structural, transport and stability studies on the films are done using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman scattering studies, electrical conductivity and diffusion length measurement. Presence of both atomic hydrogen and Ar
* in the plasma causes breaking of weak Si
Si bonds and subsequent reconstruction of strong bonds resulting in improvement of short and medium range order. The improved structural order enhances the stability of these films against light soaking. High deposition rate is due to the lesser etching of growing surface compared to the case of only hydrogen diluted silane.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.solmat.2007.03.004</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0927-0248 |
| ispartof | Solar energy materials and solar cells, 2007-08, Vol.91 (13), p.1253-1257 |
| issn | 0927-0248 1879-3398 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29993130 |
| source | ScienceDirect Journals |
| subjects | Amorphous silicon Applied sciences Argon dilution Deposition rate Energy Exact sciences and technology Natural energy Photovoltaic conversion Solar cells. Photoelectrochemical cells Solar energy Stability Staebler–Wronski effect |
| title | Amorphous silicon films with high deposition rate prepared using argon and hydrogen diluted silane for stable solar cells |
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