High-Throughput Characterization of Metal Electrode Performance for Electric-Field-Induced Resistance Switching in Metal/Pr0.7Ca0.3MnO3/Metal Structures

High‐throughput exploration of electrode materials is demonstrated with an epitaxial thin‐film device to determine the appropriate electrode materials for a resistance random access memory. In I–V measurements, only electrode pairs containing Al showed resistance switching (see figure). The disappea...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2007-07, Vol.19 (13), p.1711-1713
Main Authors: Tsubouchi, K., Ohkubo, I., Kumigashira, H., Oshima, M., Matsumoto, Y., Itaka, K., Ohnishi, T., Lippmaa, M., Koinuma, H.
Format: Article
Language:English
Subjects:
Combinatorial chemistry
Electrodes
inorganic
Interfaces
Switches
Thin films
Thin films, inorganic
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Summary:High‐throughput exploration of electrode materials is demonstrated with an epitaxial thin‐film device to determine the appropriate electrode materials for a resistance random access memory. In I–V measurements, only electrode pairs containing Al showed resistance switching (see figure). The disappearance of switching in the four‐probe measurements suggests that switching occurs near the interface of the Al electrode and the Pr0.7Ca0.3MnO3 film.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200601957