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High-Throughput Characterization of Metal Electrode Performance for Electric-Field-Induced Resistance Switching in Metal/Pr0.7Ca0.3MnO3/Metal Structures

High‐throughput exploration of electrode materials is demonstrated with an epitaxial thin‐film device to determine the appropriate electrode materials for a resistance random access memory. In I–V measurements, only electrode pairs containing Al showed resistance switching (see figure). The disappea...

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Published in:	Advanced materials (Weinheim) 2007-07, Vol.19 (13), p.1711-1713
Main Authors:	Tsubouchi, K., Ohkubo, I., Kumigashira, H., Oshima, M., Matsumoto, Y., Itaka, K., Ohnishi, T., Lippmaa, M., Koinuma, H.
Format:	Article
Language:	English
Subjects:	Combinatorial chemistry Electrodes inorganic Interfaces Switches Thin films Thin films, inorganic
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container_title	Advanced materials (Weinheim)
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creator	Tsubouchi, K. Ohkubo, I. Kumigashira, H. Oshima, M. Matsumoto, Y. Itaka, K. Ohnishi, T. Lippmaa, M. Koinuma, H.
description	High‐throughput exploration of electrode materials is demonstrated with an epitaxial thin‐film device to determine the appropriate electrode materials for a resistance random access memory. In I–V measurements, only electrode pairs containing Al showed resistance switching (see figure). The disappearance of switching in the four‐probe measurements suggests that switching occurs near the interface of the Al electrode and the Pr0.7Ca0.3MnO3 film.
doi_str_mv	10.1002/adma.200601957
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subjects	Combinatorial chemistry Electrodes inorganic Interfaces Switches Thin films Thin films, inorganic
title	High-Throughput Characterization of Metal Electrode Performance for Electric-Field-Induced Resistance Switching in Metal/Pr0.7Ca0.3MnO3/Metal Structures
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