Improvement of AlN crystalline quality with high epitaxial growth rates by hydride vapor phase epitaxy

• Published in: Journal of crystal growth 2007-07, Vol.305 (2), p.355-359
• Main Authors: Nagashima, Toru, Harada, Manabu, Yanagi, Hiroyuki, Fukuyama, Hiroyuki, Kumagai, Yoshinao, Koukitu, Akinori, Takada, Kazuya
• Format: Article
• Language: English
• Subjects: A1. Crystal structure; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure and morphology; thickness; Surface and interface electron states; Surface states, band structure, electron density of states; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2007.04.001

We have demonstrated that high-quality aluminium nintride (AlN) single crystal can be grown at high growth rates by hydride vapor phase epitaxy (HVPE) with a help of using AlN templates and step growth technique. A colorless and transparent AlN layer with 83 μm thick was grown at a growth rate of 57 μm/h at 1450 °C. Its full-width at half-maximum for {0 0 0 2} plane was 295 arcsec and that for {1 0 1¯ 1} plane was 432 arcsec. Grown AlN layer was transparent in the visible and ultraviolet region and a sharp absorption edge with band gap energy of 5.96 eV was confined.