Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells

GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells (MQWs) were fabricated from planar wafers with different quantum well widths using holographic lithography and subsequent reactive ion etching. Although the etching process led to a reduction in the MQW related luminesc...

Full description

Saved in:
Bibliographic Details
Published in:Physica Status Solidi (b) 2007-06, Vol.244 (6), p.1797-1801
Main Authors: Keller, S., Fichtenbaum, N. A., Schaake, C., Neufeld, C. J., David, A., Matioli, E., Wu, Y., DenBaars, S. P., Speck, J. S., Weisbuch, C., Mishra, U. K.
Format: Article
Language:English
Subjects:
78.55.Cr
78.67.−n
81.16.Rf
81.40.Tv
81.65.Cf
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Physics
Quantum wells
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells (MQWs) were fabricated from planar wafers with different quantum well widths using holographic lithography and subsequent reactive ion etching. Although the etching process led to a reduction in the MQW related luminescence, the etch related damage was successfully healed through annealing in NH3/N2 mixtures under optimized conditions, and the annealed nanopatterned samples exhibited enhanced photoluminescence (PL) compared to the planar wafers. Angular‐resolved PL measurements revealed extraction of guided modes from the nanopillar and nanostripe arrays (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200674752