Evolution of InAs/GaAs(001) islands during the two- to three-dimensional growth mode transition in molecular-beam epitaxy

A detailed observation was made using atomic force microscopy on the two- to three-dimensional (2D-3D) growth mode transition in the molecular-beam epitaxy of InAs/GaAs(001). The evolution of the 3D InAs islands during the 2D-3D mode transition was divided into two successive phases. The first phase...

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Bibliographic Details
Published in:Nanotechnology 2007-04, Vol.18 (16), p.165301-165301 (5)
Main Authors: Wu, J, Jin, P, Jiao, Y H, Lv, X J, Wang, Z G
Format: Article
Language:English
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Summary:A detailed observation was made using atomic force microscopy on the two- to three-dimensional (2D-3D) growth mode transition in the molecular-beam epitaxy of InAs/GaAs(001). The evolution of the 3D InAs islands during the 2D-3D mode transition was divided into two successive phases. The first phase may be explained in terms of a critical phenomenon of the second-order phase transition.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/18/16/165301