Spectra of differential gain and linewidth enhancement factor in InGaAsN/GaAs single quantum well structures

The differential gain and linewidth enhancement factor (α ‐factor) of a new material system InGaAsN/GaAs is studied using the 10‐band k · p Hamiltonian matrix. A self‐consistent scheme which involves simultaneous solution of the Schrödinger and Poisson equations is applied. It is shown that spectra...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2007-07, Vol.204 (7), p.2487-2494
Main Authors: Wartak, M. S., Weetman, P.
Format: Article
Language:English
Subjects:
42.60.Lh
78.20.Bh
78.67.De
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Physics
Quantum wells
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Summary:The differential gain and linewidth enhancement factor (α ‐factor) of a new material system InGaAsN/GaAs is studied using the 10‐band k · p Hamiltonian matrix. A self‐consistent scheme which involves simultaneous solution of the Schrödinger and Poisson equations is applied. It is shown that spectra of differential gain and α ‐factor have significant variation versus nitrogen composition and carrier density. The determined parameters and their variations play important role in designing practical structures based on InGaAsN/GaAs material system. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6300
0031-8965
1862-6319
DOI:10.1002/pssa.200622318