Fabrication and Impedance Analysis of n-ZnO Nanorod/p-Si Heterojunctions to Investigate Carrier Concentrations in Zn/O Source- Ratio-Tuned ZnO Nanorod Arrays

Charge‐carrier concentrations of well‐aligned ZnO nanorods grown on p++‐Si substrates are determined by means of ac impedance analysis of devices fabricated directly on as‐deposited samples. This approach also demonstrates that the carrier concentration can be controlled by varying the Zn/O source m...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2007-08, Vol.19 (15), p.2015-2019
Main Authors: Wu, J.-J., Wong, D. K.-P.
Format: Article
Language:English
Subjects:
Arrays
Heterojunctions
Nanorods
Nanostructured materials
Semiconductors
Zinc oxide
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Summary:Charge‐carrier concentrations of well‐aligned ZnO nanorods grown on p++‐Si substrates are determined by means of ac impedance analysis of devices fabricated directly on as‐deposited samples. This approach also demonstrates that the carrier concentration can be controlled by varying the Zn/O source molar ratio (MR) during metal–organic chemical vapor deposition (see figure).
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200602052