Enhanced ferroelectric properties of (Pb0.90La0.10)Ti0.975O3 multilayered thin films prepared by RF magnetron sputtering

• Published in: Applied surface science 2007-08, Vol.253 (20), p.8365-8370
• Main Authors: Wu, Jiagang, Xiao, Dingquan, Zhu, Jiliang, Zhu, Jianguo, Tan, Junzhe
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Niobates, titanates, tantalates, pzt ceramics, etc; Physics
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2007.04.012

The (Pb0.90La0.10)Ti0.975O3/PbTiO3 (PLT/PT), PbTiO3/(Pb0.90La0.10)Ti0.975O3/PbTiO3 (PT/PLT/PT) multilayered thin films with a PbOx buffer layer were in situ deposited by RF magnetron sputtering at the substrate temperature of 600 deg C. With this method, highly (100)-oriented PLT/PT and PT/PLT/PT multilayered thin films were obtained. The PbOx buffer layer leads to the (100) orientation of the films. The dielectric, ferroelectric and pyroelectric properties of the PLT multilayered thin films were investigated. It is found that highly (100)-oriented PT/PLT/PT multilayered thin films possess higher remnant polarization 2Pr (44.1muC/cm2) and better pyroelectric coefficient at room temperature p (p=2.425X10-8C/cm2K) than these of PLT and PLT/PT thin films. These results indicate that the design of the PT/PLT/PT multilayered thin films with a PbOx buffer layer should be an effective way to enhance the dielectric, ferroelectric and pyroelectric properties. The mechanism of the enhanced ferroelectric properties was also discussed.