Effect of a Fe3Si buffer layer for the growth of semiconducting β-FeSi2 thin film on stainless steel substrate

• Published in: Journal of crystal growth 2007-09, Vol.307 (1), p.82-86
• Main Authors: ZHENGXIN LIU, OSAMURA, Masato, OOTSUKA, Teruhisa, KURODA, Ryo, FUKUZAWA, Yasuhiro, OTOGAWA, Naotaka, NAKAYAMA, Yasuhiko, MAKITA, Yunosuke, TANOUE, Hisao
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities: doping, implantation, distribution, concentration, etc; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Solid phase epitaxy; growth from solid phases; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of film growth; Thin film structure and morphology
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2007.06.007

This paper reports a Fe3Si buffer layer for the growth of semiconducting beta-FeSi2 film on stainless steel (SS) substrate. It was formed through the silicidation reaction of Fe and Si at a Fe-rich interface at an elevated temperature of 600 deg C. beta-FeSi2 film was deposited on it at low temperature around 400 deg C. Auger electron spectroscopy depth profile showed that the inter-diffusions of Fe, Si and impurities contained in the SS substrate were effectively blocked by the buffer layer. The adhesive ability to SS substrate and crystallinity of beta-FeSi2 film were clearly improved by the introduction of the buffer layer, thus also induced the decrease of residual carrier concentration, which was revealed by capacity-voltage measurement.