Rare-earth implanted Y2O3 thin films

Thin Er, Yb co-doped Y2O3 films were grown by pulsed laser deposition from ceramic target. Subsequent ion implantation with 1.1MeV Er+ ions to a fluence of 6X1014at/cm2 at room temperature was performed in order to modify the structure of the as-deposited films. The as-deposited films have a polycry...

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Bibliographic Details
Published in:Applied surface science 2007-07, Vol.253 (19), p.8165-8168
Main Authors: PEEVA, A, DIKOVSKA, A. Og, ATANASOV, P. A, JIMENEZ DE CASTRO, M, SKORUPA, W
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Physics
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Summary:Thin Er, Yb co-doped Y2O3 films were grown by pulsed laser deposition from ceramic target. Subsequent ion implantation with 1.1MeV Er+ ions to a fluence of 6X1014at/cm2 at room temperature was performed in order to modify the structure of the as-deposited films. The as-deposited films have a polycrystalline column-like structure. Ion implantation induces defects into the as-deposited films. After annealing at 900 deg C for 1h in oxygen atmosphere, the films recrystallize in roundly shaped grain-like structure with grain size of about 100nm. The Er3+ photoluminescence response was obtained for all the films by excitation through cross-relaxation of Yb3+ ions. The IR emission spectrum, consisting of two narrow peaks at 1415 and 1514nm, differs from the typical spectra of Er-doped materials. The VIS emission spectrum observed in as-deposited films does not appear after implantation and subsequent 900 deg C annealing.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2007.02.121