Low-Voltage Organic Thin-Film Transistors with High-k Nanocomposite Gate Dielectrics for Flexible Electronics and Optothermal Sensors

Organic field effect transistors with a nanocomposite gate of ZrO2 and poly(α‐methyl styrene) (see figure, left) show performances close to the theoretically possible limit, with interface trap densities comparing favorably with the current state of the art in silicon microelectronics. They are not...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2007-09, Vol.19 (17), p.2241-2245
Main Authors: Zirkl, M., Haase, A., Fian, A., Schön, H., Sommer, C., Jakopic, G., Leising, G., Stadlober, B., Graz, I., Gaar, N., Schwödiauer, R., Bauer-Gogonea, S., Bauer, S.
Format: Article
Language:English
Subjects:
Nanocomposites
organic
Sensors
Thin films
Thin films, organic
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Summary:Organic field effect transistors with a nanocomposite gate of ZrO2 and poly(α‐methyl styrene) (see figure, left) show performances close to the theoretically possible limit, with interface trap densities comparing favorably with the current state of the art in silicon microelectronics. They are not only key elements in flexible electronics, but also in low‐cost, high‐end sensors, as demonstrated with optothermal sensing elements (see figure, right).
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200700831