Effect of gas flow on the selective area growth of gallium nitride via metal organic vapor phase epitaxy

• Published in: Journal of crystal growth 2007-08, Vol.306 (1), p.75-79
• Main Authors: Rodak, L.E., Kasarla, K.R., Korakakis, D.
• Format: Article
• Language: English
• Subjects: A3. Metalorganic chemical vapor deposition; A3. Selective area growth; B1. Gallium nitride; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Theory and models of film growth; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2007.03.063

The effect of gas flow on the selective area growth (SAG) of gallium nitride (GaN) grown via metal organic vapor phase epitaxy (MOVPE) has been investigated. In this study, the SAG of GaN was carried out on a silicon dioxide striped pattern along the GaN 〈 1 1 ¯ 0 0 〉 direction. SAG was initiated with the striped pattern oriented parallel and normal to the incoming gas flow in a horizontal reactor. The orientation of the pattern did not impact cross section of the structure after re-growth as both orientations resulted in similar trapezoidal structures bounded by the (0 0 0 1) and { 1 1 2 ¯ n } facets ( n ≈ 1.7 - 2.2 ). However, the growth rates were shown to depend on the orientation of the pattern as the normally oriented samples exhibited enhanced vertical and cross-sectional growth rates compared to the parallel oriented samples. All growths occurred under identical conditions and therefore the difference in growth rates must be attributed to a difference in mass transport of species.